Since its inception in 1984, VLSI Standards has been a consistent contributor and participant in industry forums and consortia. VLSI Standard's employees have served as both board members and Standards Committee members for SEMI. VLSI Standards personnel are often called on for their technical expertise to collaborate with government standards bodies and the largest companies in the industry on the latest concepts for advancing the industry. Here are just a few of our technical contributions for your reference: Accurate and Reliable Optical CD of MuGFET down to 10 nm IMEC,VLSI Standards, Proc. Of SPIE Vol. 6518* Comprehensive Approach to MuGFET Metrology IMEC, KLA-Tencor, VLSI Standards, Proc. Of SPIE Vol. 6152* CD Measurement of Angled Lines on High-End Masks and its Calibration Method Holon Co., Ltd., Proc. Of SPIE Vol. 5992* Sub-50 nm Isolated Line and Trench Width Artifacts for CD Metrology KLA-Tencor, VLSI Standards, Proc. Of SPIE Vol. 5375* NIST-Traceable Calibration of CD-SEM Using a 100 nm Pitch Standard VLSI Standards, Proc. Of SPIE Vol. 5038* Metrology Standards for Semiconductor Manufacturing VLSI Standards, IEEE 0-7803-8511/X/04** 100 nm Pitch Standard Characterization for Metrology Applications VLSI Standards, Proc. Of SPIE Vol. 4689* Characterization of an 100 nm 1D Pitch Standard by Metrological SEM and SFM Physikalisch-Technische Bundesanstalt (PTB), VLSI Standards, Proc. Of SPIE Vol. 5375* Reticle Programmed Defect Size Measurement using Low-Voltage SEM and pattern recognition techniques KLA Tencor, VLSI Standards, Proc. Of SPIE Vol. 3996* Development of the Nitride Film Thickness Standard (NFTS) VLSI Standards, Proc. Of SPIE Vol. 3479* Development of a Physical Haze and Microroughness Standard VLSI Standards, Proc. Of SPIE Vol. 2862* Measurement of a CD and Sidewall Angle Artifact with Two-Dimensional CD-AFM Metrology National Institute of Standards and Technology (NIST), Digital Semiconductor, Univ. of Maryland, VLSI Standards, Veeco Metrology, Proc. Of SPIE Vol. 2725* Polarization of out-of-plane Optical Scatter from SiO2 Films Grown on Photolithographically-Generated Microrough Silicon National Institute of Standards and Technology (NIST), VLSI Standards, Proc. Of SPIE Vol. 3426* Selection of Calibration Particles for Scanning Surface Inspection Systems Sematech, National Institute of Standards and Technology (NIST), VLSI Standards, Proc. Of SPIE Vol. 2862* Reticle Defect Size Calibration using Low-Voltage SEM and pattern recognition techniques for sub-200 nm Defects KLA Tencor, VLSI Standards, Proc. Of SPIE Vol. 3873* Numerical Simulation of Thick Line Width Measurements by Reflected Light Weidlinger Associates, Sematech, VLSI Standards, Proc. Of SPIE Vol. 1464* Model of Light scattering Structures with Particle Contaminants Arizona State University, Proc. Of SPIE Vol. 2862* Development of a Smooth-Surface Microroughness Standard ADE Optical, VLSI Standards, Proc. Of SPIE Vol. 3141* Reticle Defect Sizing of Optical Proximity Correction Defects Using SEM Imaging and Image Analysis Techniques KLA Tencor, VLSI Standards, Proc. Of SPIE Vol. 4066* A New Line Width Standard for Refelected Light Inspection CD Metrology, Inc., VLSI Standards, Proc. Of SPIE Vol. 1464* *Copyright Society of Photo-Optical Instrumentation Engineers. This paper was published in and is made available as an electronic reprint with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. ** "2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE."